Invention Grant
- Patent Title: Semiconductor memory device and on-die termination circuit
- Patent Title (中): 半导体存储器件和片上终端电路
-
Application No.: US12469446Application Date: 2009-05-20
-
Publication No.: US08044680B2Publication Date: 2011-10-25
- Inventor: Dong-Ho Hyun , Jin-Sung Kim
- Applicant: Dong-Ho Hyun , Jin-Sung Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2008-0056774 20080617
- Main IPC: H03K17/16
- IPC: H03K17/16
Abstract:
An on-die termination (ODT) circuit including drive signal generators, each drive signal generator configured to generate a corresponding plurality of ODT drive signals; and ODT drive units, each ODT drive unit configured to terminate a corresponding terminal with a termination resistance in response to the ODT drive signals of a corresponding drive signal generator. The drive signal generators are configured to supply the ODT drive signals to the ODT drive units to output a plurality of ODT control signals through the terminals in a test mode.
Public/Granted literature
- US20090309628A1 SEMICONDUCTOR MEMORY DEVICE AND ON-DIE TERMINATION CIRCUIT Public/Granted day:2009-12-17
Information query
