Invention Grant
- Patent Title: Semiconductor device and driving method of the same
- Patent Title (中): 半导体装置及其驱动方法
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Application No.: US12625618Application Date: 2009-11-25
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Publication No.: US08045369B2Publication Date: 2011-10-25
- Inventor: Kiyoshi Kato , Yasuyuki Arai , Shunpei Yamazaki
- Applicant: Kiyoshi Kato , Yasuyuki Arai , Shunpei Yamazaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Erin J. Robinson
- Priority: JP2004-110508 20040402
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
The invention provides a semiconductor device including a memory of a simple structure to provide an inexpensive semiconductor device and a driving method thereof. The semiconductor device of the invention includes a phase change memory including a memory cell array having a plurality of memory cells, a control circuit that controls the phase change memory, and an antenna. The memory cell array includes a plurality of bit lines that extend in a first direction and word lines that extend in a second direction perpendicular to the first direction. Each of the plurality of memory cells includes a phase change layer provided between the bit lines and the word lines. In the semiconductor device having the aforementioned structure, one or both of a conductive layer that forms the bit lines and a conductive layer that forms the word lines transmits light.
Public/Granted literature
- US20100072286A1 SEMICONDUCTOR DEVICE AND DRIVING METHOD OF THE SAME Public/Granted day:2010-03-25
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