Invention Grant
- Patent Title: Multiple level programming in a non-volatile memory device
- Patent Title (中): 在非易失性存储器件中进行多级编程
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Application No.: US12125147Application Date: 2008-05-22
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Publication No.: US08045392B2Publication Date: 2011-10-25
- Inventor: Hagop A. Nazarian
- Applicant: Hagop A. Nazarian
- Applicant Address: US NY Mt. Kisco
- Assignee: Round Rock Research, LLC
- Current Assignee: Round Rock Research, LLC
- Current Assignee Address: US NY Mt. Kisco
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/06
Abstract:
The programming method of the present invention minimizes program disturb by initially programming cells on the same word line with the logical state having the highest threshold voltage. The remaining cells on the word line are programmed to their respective logical states in order of decreasing threshold voltage levels.
Public/Granted literature
- US20080219055A1 MULTIPLE LEVEL PROGRAMMING IN A NON-VOLATILE MEMORY DEVICE Public/Granted day:2008-09-11
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