Invention Grant
US08045394B2 Word line driving circuit, semiconductor memory device including the same, and method for testing the semiconductor memory device
有权
字线驱动电路，包括其的半导体存储器件以及半导体存储器件的测试方法
- Patent Title: Word line driving circuit, semiconductor memory device including the same, and method for testing the semiconductor memory device
- Patent Title (中): 字线驱动电路，包括其的半导体存储器件以及半导体存储器件的测试方法
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Application No.: US12003546Application Date: 2007-12-28
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Publication No.: US08045394B2Publication Date: 2011-10-25
- Inventor: Chang-Ho Do
- Applicant: Chang-Ho Do
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2007-0055964 20070608
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A semiconductor memory device in accordance with the present invention is able to facilitate detecting whether a word line fails or not by floating the word line. The semiconductor memory device includes a word line driver, and a floating controller. The word line driver is configured to control a word line to be enabled/disabled. The floating controller is configured to control the word line driver to float the word line in response to a word line floating signal.
Public/Granted literature
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