Invention Grant
US08045415B2 Memory devices having programmable elements with accurate operating parameters stored thereon
有权
存储器件具有存储在其上的精确操作参数的可编程元件
- Patent Title: Memory devices having programmable elements with accurate operating parameters stored thereon
- Patent Title (中): 存储器件具有存储在其上的精确操作参数的可编程元件
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Application No.: US12707491Application Date: 2010-02-17
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Publication No.: US08045415B2Publication Date: 2011-10-25
- Inventor: Jeffery W. Janzen , Scott Schaefer , Todd D. Farrell
- Applicant: Jeffery W. Janzen , Scott Schaefer , Todd D. Farrell
- Applicant Address: US NY Mt. Kisco
- Assignee: Round Rock Research, LLC
- Current Assignee: Round Rock Research, LLC
- Current Assignee Address: US NY Mt. Kisco
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: G11C17/18
- IPC: G11C17/18

Abstract:
Techniques are disclosed for reading operating parameters from programmable elements on memory devices to configure a memory system. More specifically, programmable elements, such as antifuses, located on a memory device are programmed during fabrication with measured operating parameters corresponding to the memory device. Operating parameters may include, for example, operating current values, operating voltages, or timing parameters. The memory device may be incorporated into a memory module that is incorporated into a system. Once the memory module is incorporated into a system, the programmable elements may be accessed such that the memory system can be configured to optimally operate in accordance with the operating parameters measured for each memory device in the system.
Public/Granted literature
- US20100142251A1 MEMORY DEVICES HAVING PROGRAMMABLE ELEMENTS WITH ACCURATE OPERATING PARAMETERS STORED THEREON Public/Granted day:2010-06-10
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