Invention Grant
- Patent Title: Method for correcting layout with pitch change section
- Patent Title (中): 用间距改变部分校正布局的方法
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Application No.: US12341980Application Date: 2008-12-22
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Publication No.: US08046723B2Publication Date: 2011-10-25
- Inventor: Chan Ha Park
- Applicant: Chan Ha Park
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2008-0058486 20080620
- Main IPC: G06F9/455
- IPC: G06F9/455

Abstract:
A method for correcting a layout with a pitch change section may include disposing a pattern layout with the pitch change section having a first pattern and a second pattern at a pitch relatively larger than that of the first pattern, measuring the pitch change from the pattern layout, a step of measuring an aerial image intensity by performing a simulation operation on the area with the pitch change section; modifying the pitch of the layout in the pitch change section based on a threshold intensity value at which the pattern is formed; and processing the layout correction to cause the pitch to exist within the threshold range by comparing the image intensity of the modified layout with the image intensity of the reference area.
Public/Granted literature
- US20090319970A1 Method for Correcting Layout with Pitch Change Section Public/Granted day:2009-12-24
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