Invention Grant
- Patent Title: Method for selectively removing conductive material from a microelectronic substrate
- Patent Title (中): 从微电子衬底选择性去除导电材料的方法
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Application No.: US12580941Application Date: 2009-10-16
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Publication No.: US08048287B2Publication Date: 2011-11-01
- Inventor: Whonchee Lee , Scott E. Moore , Scott G. Meikle
- Applicant: Whonchee Lee , Scott E. Moore , Scott G. Meikle
- Applicant Address: US NY Mt Kisco
- Assignee: Round Rock Research, LLC
- Current Assignee: Round Rock Research, LLC
- Current Assignee Address: US NY Mt Kisco
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: C25F3/16
- IPC: C25F3/16

Abstract:
Methods and apparatuses for selectively removing conductive materials from a microelectronic substrate. A method in accordance with an embodiment of the invention includes positioning the microelectronic substrate proximate to and spaced apart from an electrode pair that includes a first electrode and a second electrode spaced apart from the first electrode. An electrolytic liquid can be directed through a first flow passage to an interface region between the microelectronic substrate and the electrode pair. A varying electrical signal can be passed through the electrode pair and the electrolytic liquid to remove conductive material from the microelectronic substrate. The electrolytic liquid can be removed through a second flow passage proximate to the first flow passage and the electrode pair.
Public/Granted literature
- US20100032314A1 METHODS AND APPARATUS FOR SELECTIVELY REMOVING CONDUCTIVE MATERIAL FROM A MICROELECTRONIC SUBSTRATE Public/Granted day:2010-02-11
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