Invention Grant
- Patent Title: Sensing chip
- Patent Title (中): 感应芯片
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Application No.: US12346950Application Date: 2008-12-31
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Publication No.: US08048385B2Publication Date: 2011-11-01
- Inventor: Huang Yi Dong , Rao Yi , Liu Fang , Zhang Wei , Peng Jiang De , Dai Ohnishi , Daisuke Niwa , Atsushi Tazuke , Yoshikatsu Miura
- Applicant: Huang Yi Dong , Rao Yi , Liu Fang , Zhang Wei , Peng Jiang De , Dai Ohnishi , Daisuke Niwa , Atsushi Tazuke , Yoshikatsu Miura
- Applicant Address: JP Kyoto CN Beijing
- Assignee: Rohm Co., Ltd.,Tsinghua University
- Current Assignee: Rohm Co., Ltd.,Tsinghua University
- Current Assignee Address: JP Kyoto CN Beijing
- Agency: Fish & Richardson P.C.
- Priority: CN200810055626 20080104
- Main IPC: G01N21/75
- IPC: G01N21/75

Abstract:
There is provided a sensing chip capable of measuring a refractive index by utilizing a long-range surface plasmon polariton, accurately measuring an accumulative refractive index in a wide range, and more easily enabling sealing for measurement. The present invention relates to the sensing chip which has a thin metal film or a strip-like metal grown on an underlayer, and has a dielectric that limits a refractive index and a dielectric buffer layer on an upper surface and a lower surface of the thin metal film or the strip-like metal. The dielectric buffer layer is attached onto the thin metal film or the strip-like metal. The thin metal film or the strip-like metal and the buffer layer are sandwiched between two dielectric layers. A hole is made in a surface of the upper dielectric layer to serve as a measurement groove.
Public/Granted literature
- US20090209028A1 Sensing Chip Public/Granted day:2009-08-20
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