Invention Grant
- Patent Title: Parameter extracting method
- Patent Title (中): 参数提取方法
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Application No.: US11261790Application Date: 2005-10-31
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Publication No.: US08048600B2Publication Date: 2011-11-01
- Inventor: Kozo Ogino
- Applicant: Kozo Ogino
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Priority: JP2005-211042 20050721
- Main IPC: G03F9/00
- IPC: G03F9/00

Abstract:
A parameter extracting method capable of accurately and effectively extracting parameters used for charged particle beam exposure. The method comprises the steps of forming an unknown parameter layer on a known parameter layer, forming a resist on the unknown parameter layer, subjecting the resist to exposure through patterns changed in an existing range, and extracting parameters of the unknown parameter layer using the exposure result. In the parameter extraction method, parameters of layers lower than the unknown parameter layer are known. Therefore, layer combinations to be considered and the number of experimental data can be drastically reduced. After parameter extraction of the unknown parameter layer, an unknown parameter layer is newly formed on the layer. Then, the parameter thereof is extracted in the same manner. Thus, the parameter is extracted sequentially from lower layers and therefore, the parameter in the multitiered structure having various layer combinations can be accurately and effectively extracted.
Public/Granted literature
- US20070021938A1 Parameter extracting method Public/Granted day:2007-01-25
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