Invention Grant
US08048601B2 Aminosilane and self crosslinking acrylic resin hole blocking layer photoconductors
失效
氨基硅烷和自交联丙烯酸树脂空穴阻挡层感光体
- Patent Title: Aminosilane and self crosslinking acrylic resin hole blocking layer photoconductors
- Patent Title (中): 氨基硅烷和自交联丙烯酸树脂空穴阻挡层感光体
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Application No.: US12129948Application Date: 2008-05-30
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Publication No.: US08048601B2Publication Date: 2011-11-01
- Inventor: Jin Wu
- Applicant: Jin Wu
- Applicant Address: US CT Norwalk
- Assignee: Xerox Corporation
- Current Assignee: Xerox Corporation
- Current Assignee Address: US CT Norwalk
- Agency: Oliff & Berridge, PLC
- Main IPC: G03G5/00
- IPC: G03G5/00
Abstract:
A photoconductor that includes, for example, a substrate; a first layer like a ground plane layer; an undercoat layer thereover wherein the undercoat layer contains an aminosilane and a crosslinked acrylic resin; a photogenerating layer; and at least one charge transport layer.
Public/Granted literature
- US20090297962A1 AMINOSILANE AND SELF CROSSLINKING ACRYLIC RESIN HOLE BLOCKING LAYER PHOTOCONDUCTORS Public/Granted day:2009-12-03
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