Invention Grant
- Patent Title: Structure and method for manipulating spin quantum state through dipole polarization switching
- Patent Title (中): 通过偶极偏振切换操作自旋量子态的结构和方法
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Application No.: US12116239Application Date: 2008-05-07
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Publication No.: US08048684B2Publication Date: 2011-11-01
- Inventor: Hee Sang Kim , Nam Mee Kim
- Applicant: Hee Sang Kim , Nam Mee Kim
- Applicant Address: KR Suwon-Si KR Seoul
- Assignee: Samsung Electronics Co., Ltd.,Seoul National University Industry Foundation
- Current Assignee: Samsung Electronics Co., Ltd.,Seoul National University Industry Foundation
- Current Assignee Address: KR Suwon-Si KR Seoul
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2007-0097733 20070928
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/00 ; H01L29/02 ; H01L29/04 ; H01L29/06 ; H01L29/10 ; H01L29/12 ; H01L31/00 ; H01L47/00 ; G11C11/22

Abstract:
Disclosed herein is a structure and method for manipulating a spin state, regarded as important in the field of spintronics, by which the distribution of spin-up and spin-down states of carriers in a hybrid double quantum disk structure, composed of a diluted magnetic semiconductor and a ferroelectric compound semiconductor, is manipulated through dipole polarization switching of the ferroelectric compound semiconductor without a change in bias. Giant Zeeman splitting properties of the diluted magnetic semiconductor and polarization properties of the ferroelectric compound semiconductor are applied in conjunction with the Pauli exclusion principle, thus enabling the combination or separation of carriers in spin-up and spin-down states in the hybrid double quantum disk structure. The spin relaxation time in the structure is on the order of microseconds, during which the spin state is well-defined, and therefore, the structure can be applied to microprocessors having gigahertz clock speeds.
Public/Granted literature
- US20090085026A1 STRUCTURE AND METHOD FOR MANIPULATING SPIN QUANTUM STATE THROUGH DIPOLE POLARIZATION SWITCHING Public/Granted day:2009-04-02
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