Invention Grant
- Patent Title: Methods and structures for relaxation of strained layers
- Patent Title (中): 应变层松弛的方法和结构
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Application No.: US12341722Application Date: 2008-12-22
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Publication No.: US08048693B2Publication Date: 2011-11-01
- Inventor: Fabrice Letertre , Carlos Mazure
- Applicant: Fabrice Letertre , Carlos Mazure
- Applicant Address: FR Bernin
- Assignee: S.O.I. Tec Silicon on Insulator Technologies
- Current Assignee: S.O.I. Tec Silicon on Insulator Technologies
- Current Assignee Address: FR Bernin
- Agency: Winston & Strawn LLP
- Priority: EP08290757 20080806
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
The present invention provides methods for relaxing a strained-material layer and structures produced by the methods. Briefly, the methods include depositing a first low-viscosity layer that includes a first compliant material on the strained-material layer, depositing a second low-viscosity layer that includes a second compliant material on the strained-material layer to form a first sandwiched structure and subjecting the first sandwiched structure to a heat treatment such that the reflow of the first and the second low-viscosity layers permits the strained-material layer to at least partly relax.
Public/Granted literature
- US20100032805A1 METHODS AND STRUCTURES FOR RELAXATION OF STRAINED LAYERS Public/Granted day:2010-02-11
Information query
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