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US08048701B2 Nitride semiconductor LED using a hybrid buffer layer and a fabrication method therefor 失效
使用混合缓冲层的氮化物半导体LED及其制造方法

  • Patent Title: Nitride semiconductor LED using a hybrid buffer layer and a fabrication method therefor
  • Patent Title (中): 使用混合缓冲层的氮化物半导体LED及其制造方法
  • Application No.: US12667201
    Application Date: 2009-02-05
  • Publication No.: US08048701B2
    Publication Date: 2011-11-01
  • Inventor: Youngkyn Noh , Jae-Eung Oh
  • Applicant: Youngkyn Noh , Jae-Eung Oh
  • Applicant Address: KR
  • Assignee: Wooree Lst Co. Ltd
  • Current Assignee: Wooree Lst Co. Ltd
  • Current Assignee Address: KR
  • Agency: Husch Blackwell
  • Priority: KR10-2008-0014819 20080219
  • International Application: PCT/KR2009/000562 WO 20090205
  • International Announcement: WO2009/104874 WO 20090827
  • Main IPC: H01L21/00
  • IPC: H01L21/00
Nitride semiconductor LED using a hybrid buffer layer and a fabrication method therefor
Abstract:
The present invention relates to a nitride semiconductor light emitting device using a hybrid buffer layer and a method for fabricating the same which can minimize the lattice mismatch between a buffer layer and a nitride semiconductor. The method for fabricating the nitride semiconductor light emitting device using the hybrid buffer layer includes a first step of forming an AlxGa1-xN(0≦x
Abstract(Chinese):

本发明涉及使用混合缓冲层的氮化物半导体发光器件及其制造方法，其可以使缓冲层和氮化物半导体之间的晶格失配最小化。 使用该混合缓冲层的氮化物半导体发光元件的制造方法包括：在基板上形成Al x Ga 1-x N（0＆lt; n 1; x 1）层的第1工序，形成三维晶种晶层的第2工序 通过使Al x Ga 1-x N（0＆lt; 1 | x | 1）层上的衬底再结晶，在衬底上包含在通式Al x Ga 1-x N（0＆lt; 1E; x 1）和AlO y N z中的材料的第三步骤， AlN纳米结构，通过在NH 3气体气氛下对经过第二步骤的衬底进行退火，从而在衬底上形成由三维晶种层和AlN纳米结构组成的混合缓冲层。

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