Invention Grant
US08048703B2 Light emitting devices with inhomogeneous quantum well active regions
有权
具有不均匀量子阱活性区域的发光器件
- Patent Title: Light emitting devices with inhomogeneous quantum well active regions
- Patent Title (中): 具有不均匀量子阱活性区域的发光器件
-
Application No.: US12756159Application Date: 2010-04-07
-
Publication No.: US08048703B2Publication Date: 2011-11-01
- Inventor: Christopher L. Chua , Zhihong Yang , John E. Northrup , Noble Marshall Johnson
- Applicant: Christopher L. Chua , Zhihong Yang , John E. Northrup , Noble Marshall Johnson
- Applicant Address: US CA Palo Alto
- Assignee: Palo Alto Research Center Incorporation
- Current Assignee: Palo Alto Research Center Incorporation
- Current Assignee Address: US CA Palo Alto
- Agency: Marger Johnson & McCollom, P.C.
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A method of fabricating a light emitting device includes modulating a crystal growth parameter to grow a quantum well layer that is inhomogeneous and that has a non-random composition fluctuation across the quantum well layer.
Public/Granted literature
- US20100197062A1 LIGHT EMITTING DEVICES WITH INHOMOGENEOUS QUANTUM WELL ACTIVE REGIONS Public/Granted day:2010-08-05
Information query
IPC分类:
