Invention Grant
- Patent Title: Method for forming deep isolation in imagers
- Patent Title (中): 在成像器中形成深度隔离的方法
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Application No.: US12942507Application Date: 2010-11-09
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Publication No.: US08048711B2Publication Date: 2011-11-01
- Inventor: Hung Q. Doan , Eric G. Stevens
- Applicant: Hung Q. Doan , Eric G. Stevens
- Applicant Address: US CA Santa Clara
- Assignee: Omnivision Technologies, Inc.
- Current Assignee: Omnivision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L31/18
- IPC: H01L31/18

Abstract:
An image sensor having an imaging area that includes a substrate layer and a plurality of pixels formed therein. Multiple pixels each include a photodetector formed in the substrate layer. Isolation layers are formed in the substrate layer by performing a series of implants of one or more dopants of a first conductivity type into the substrate layer. Each isolation layer implant is performed with a different energy than the other isolation layer implants in the series and each implant implants the one or more dopants into the entire imaging area. The photodetectors are formed in the substrate layer by performing a series of implants of one or more dopants of a second conductivity type into each pixel in the substrate layer. Each photodetector implant is performed with a different energy than the other photodetector implants in the series.
Public/Granted literature
- US20110159635A1 METHOD FOR FORMING DEEP ISOLATION IN IMAGERS Public/Granted day:2011-06-30
Information query
IPC分类: