Invention Grant
- Patent Title: Method for reducing low frequency noise of transistor
- Patent Title (中): 降低晶体管低频噪声的方法
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Application No.: US12406297Application Date: 2009-03-18
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Publication No.: US08048731B2Publication Date: 2011-11-01
- Inventor: Mikio Fujiwara , Masahide Sasaki , Hiroshi Matsuo , Hirohisa Nagata
- Applicant: Mikio Fujiwara , Masahide Sasaki , Hiroshi Matsuo , Hirohisa Nagata
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: National Institute of Information and Communications Technology,National Institutes of Natural Sciences
- Current Assignee: National Institute of Information and Communications Technology,National Institutes of Natural Sciences
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: McGlew and Tuttle, P.C.
- Main IPC: H01L21/335
- IPC: H01L21/335
Abstract:
A method for reducing low frequency noise of a transistor operable at cryogenic temperatures includes a first step in which the transistor is illuminated with a light in a state that the transistor is activated and flowed current by supplying a power at a predetermined temperature, and a second step in which the transistor is operated at the predetermined temperature after the illumination of the light.
Public/Granted literature
- US20100237934A1 METHOD FOR REDUCING LOW FREQUENCY NOISE OF TRANSISTOR Public/Granted day:2010-09-23
Information query
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