Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12720287Application Date: 2010-03-09
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Publication No.: US08048759B2Publication Date: 2011-11-01
- Inventor: Toshiaki Iwamatsu
- Applicant: Toshiaki Iwamatsu
- Applicant Address: JP Kawasaki-Shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-Shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-285688 20061020
- Main IPC: H01L21/762
- IPC: H01L21/762
Abstract:
The present invention aims at offering the semiconductor device which has the structure which are a high speed and a low power, and can be integrated highly. The present invention is a semiconductor device formed in the SOI substrate by which the BOX layer and the SOI layer were laminated on the silicon substrate. And the present invention is provided with the FIN type transistor with which the gate electrode coiled around the body region formed in the SOI layer, and the planar type transistor which was separated using partial isolation and full isolation together to element isolation, and was formed in the SOI layer.
Public/Granted literature
- US20100167492A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-07-01
Information query
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