Invention Grant
US08048788B2 Method for treating non-planar structures using gas cluster ion beam processing
有权
使用气体簇离子束处理处理非平面结构的方法
- Patent Title: Method for treating non-planar structures using gas cluster ion beam processing
- Patent Title (中): 使用气体簇离子束处理处理非平面结构的方法
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Application No.: US12575887Application Date: 2009-10-08
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Publication No.: US08048788B2Publication Date: 2011-11-01
- Inventor: John J. Hautala , Noel Russell
- Applicant: John J. Hautala , Noel Russell
- Applicant Address: US MA Billerica
- Assignee: TEL Epion Inc.
- Current Assignee: TEL Epion Inc.
- Current Assignee Address: US MA Billerica
- Agency: Wood, Herron & Evans, LLP
- Main IPC: H01L21/425
- IPC: H01L21/425

Abstract:
A method for treating a structure is described. One embodiment includes forming a structure on a substrate, wherein the structure has a plurality of surfaces including one or more first surfaces lying substantially parallel to a first plane parallel with said substrate and one or more second surfaces lying substantially perpendicular to the first plane. Additionally, the method comprises directing a gas cluster ion beam (GCIB) formed from a material source toward the substrate with a direction of incidence, and orienting the substrate relative to the direction of incidence. The method further comprises treating the one or more second surfaces.
Public/Granted literature
- US20110084216A1 METHOD FOR TREATING NON-PLANAR STRUCTURES USING GAS CLUSTER ION BEAM PROCESSING Public/Granted day:2011-04-14
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