Invention Grant
- Patent Title: Method and apparatus for thinning a substrate
- Patent Title (中): 减薄基板的方法和装置
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Application No.: US12205269Application Date: 2008-09-05
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Publication No.: US08048807B2Publication Date: 2011-11-01
- Inventor: Ming Chyi Liu , Yao Fei Chuang , Martin Liu , Gwo-Yuh Shiau , Chia-Shiung Tsai
- Applicant: Ming Chyi Liu , Yao Fei Chuang , Martin Liu , Gwo-Yuh Shiau , Chia-Shiung Tsai
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
Provided is a method for fabricating a semiconductor device that includes providing a semiconductor substrate having a front side and a backside, where active or passive devices are formed in the front side, rotating the semiconductor substrate, and etching the backside of the semiconductor substrate by introducing a first etchant while the substrate is rotated, the first etchant including an R—COOH.
Public/Granted literature
- US20100062611A1 Method and Apparatus for Thinning a Substrate Public/Granted day:2010-03-11
Information query
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