Invention Grant
US08048817B2 Amorphous silica powder, process for its production, and sealing material for semiconductors
有权
无定形二氧化硅粉末,其生产工艺及半导体密封材料
- Patent Title: Amorphous silica powder, process for its production, and sealing material for semiconductors
- Patent Title (中): 无定形二氧化硅粉末,其生产工艺及半导体密封材料
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Application No.: US12517851Application Date: 2007-12-21
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Publication No.: US08048817B2Publication Date: 2011-11-01
- Inventor: Yasuhisa Nishi , Tohru Umezaki
- Applicant: Yasuhisa Nishi , Tohru Umezaki
- Applicant Address: JP Tokyo
- Assignee: Denki Kagaku Kogyo Kabushiki Kaisha
- Current Assignee: Denki Kagaku Kogyo Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-346638 20061222
- International Application: PCT/JP2007/074727 WO 20071221
- International Announcement: WO2008/078706 WO 20080703
- Main IPC: C03C3/083
- IPC: C03C3/083 ; C03C3/06 ; C08L63/00 ; B60C1/00 ; C04B35/14 ; C04B35/00

Abstract:
To provide an amorphous silica powder suitable for a sealing material for semiconductors having improved HTSL properties and HTOL properties, and a process for its production.An amorphous silica powder containing Al in an amount of from 0.03 to 20 mass % as calculated as Al2O3 measured by atomic absorption spectrophotometry, wherein the average particle size is at most 50 μm, and when the amorphous silica powder is divided according to the average particle size into two powders, a powder having a particle size smaller than the average particle size has a higher content as calculated as Al2O3 than a powder having a particle size larger than the average particle size.
Public/Granted literature
- US20110021666A1 AMORPHOUS SILICA POWDER, PROCESS FOR ITS PRODUCTION, AND SEALING MATERIAL FOR SEMICONDUCTORS Public/Granted day:2011-01-27
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