Invention Grant
- Patent Title: Silphenylene compound and process for producing the same
- Patent Title (中): 硅烯化合物及其制造方法
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Application No.: US12332924Application Date: 2008-12-11
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Publication No.: US08048978B2Publication Date: 2011-11-01
- Inventor: Michihiro Sugo , Takahiro Goi , Tomoyuki Goto , Shohei Tagami
- Applicant: Michihiro Sugo , Takahiro Goi , Tomoyuki Goto , Shohei Tagami
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JPP.2007-323032 20071214
- Main IPC: C08G77/12
- IPC: C08G77/12
Abstract:
The present invention relates to a silphenylene compound represented by the following formula (1): in which R1 to R4 each independently represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 6 carbon atoms, and R5 and R6 each independently represents a divalent hydrocarbon group having 2 to 8 carbon atoms. The silphenylene compound of the present invention is useful as a flexible printed wiring board material, a passivation film for IC chips, and a panel material for liquid crystals.
Public/Granted literature
- US20090156753A1 SILPHENYLENE COMPOUND AND PROCESS FOR PRODUCING THE SAME Public/Granted day:2009-06-18
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