Invention Grant
- Patent Title: Microelectronic device
- Patent Title (中): 微电子器件
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Application No.: US12286626Application Date: 2008-10-01
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Publication No.: US08049110B2Publication Date: 2011-11-01
- Inventor: Vincent C. Korthuis
- Applicant: Vincent C. Korthuis
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H05K1/02
- IPC: H05K1/02 ; H05K3/00

Abstract:
A method of manufacturing a microelectronic device including imprinting a layer on a substrate with an imprinted pattern, the imprinted pattern defining a first anchor impression within the layer that includes a first base region positioned adjacent the layer and a first distal region positioned opposite the first base region, the first distal region defining a cross sectional area greater than a cross sectional area of the first base region, and the imprinted pattern defining a second anchor impression within the layer that includes a second base region positioned adjacent the layer and a second distal region positioned opposite the second base region, the second distal region defining a cross sectional area greater than a cross sectional area of the second base region and greater than a cross sectional area of the first distal region.
Public/Granted literature
- US20100078210A1 Microelectronic device Public/Granted day:2010-04-01
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