Invention Grant
US08049190B2 Electron beam writing method, fine pattern writing system, method for manufacturing uneven pattern carrying substrate, and method for manufacturing magnetic disk medium 失效
电子束写入方法,精细图案写入系统,制造不均匀图案的衬底的方法以及制造磁盘介质的方法

  • Patent Title: Electron beam writing method, fine pattern writing system, method for manufacturing uneven pattern carrying substrate, and method for manufacturing magnetic disk medium
  • Patent Title (中): 电子束写入方法,精细图案写入系统,制造不均匀图案的衬底的方法以及制造磁盘介质的方法
  • Application No.: US12410786
    Application Date: 2009-03-25
  • Publication No.: US08049190B2
    Publication Date: 2011-11-01
  • Inventor: Kazunori KomatsuToshihiro Usa
  • Applicant: Kazunori KomatsuToshihiro Usa
  • Applicant Address: JP Tokyo
  • Assignee: Fujifilm Corporation
  • Current Assignee: Fujifilm Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Young & Thompson
  • Priority: JP2008-079725 20080326
  • Main IPC: G03C5/00
  • IPC: G03C5/00
Electron beam writing method, fine pattern writing system, method for manufacturing uneven pattern carrying substrate, and method for manufacturing magnetic disk medium
Abstract:
When writing the shapes of elements of a fine pattern on a substrate by microscopically vibrating the electron beam back and forth in a radial direction of the substrate or in a direction orthogonal to the radial direction and deflecting the electron beam in a direction orthogonal to the vibration direction to scan the electron beam so as to completely fill the shapes of the elements, a proximity-effect correction is performed according to the arrangement density of the elements in which the amount of dose is adjusted by setting the deflection speed faster for the writing of an element in a densely arranged region than for the writing of an identical element in a sparsely arranged region.
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