Invention Grant
- Patent Title: Phase-change memory device
- Patent Title (中): 相变存储器件
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Application No.: US12334385Application Date: 2008-12-12
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Publication No.: US08049196B2Publication Date: 2011-11-01
- Inventor: Jin-Ki Jung
- Applicant: Jin-Ki Jung
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: Lowe Hauptman Ham & Berner LLP
- Priority: KR10-2008-0031473 20080404
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
A phase-change memory device includes a lower electrode; and at least two phase-change memory cells sharing the lower electrode. Another phase-change memory device includes a heating layer having a smaller contact area with a phase-change material layer and a greater contact area with a PN diode structure.
Public/Granted literature
- US20090250679A1 PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2009-10-08
Information query
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