Invention Grant
US08049200B2 Bottom electrode for memory device and method of forming the same 有权
用于记忆装置的底电极及其形成方法

Bottom electrode for memory device and method of forming the same
Abstract:
Contacts having use in an integrated circuit and exemplary methods of forming the contacts are disclosed. The methods involve forming a conductive cap over a metal plug. The invention can mitigate keyholes in the contacts by capping and encapsulating the conductive material used to form the contact. The exemplary cap may be made of a nitride material.
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