Invention Grant
- Patent Title: Light emitting device fabrication method thereof, and light emitting apparatus
- Patent Title (中): 发光元件的制造方法以及发光装置
-
Application No.: US12720206Application Date: 2010-03-09
-
Publication No.: US08049241B2Publication Date: 2011-11-01
- Inventor: Hwan Hee Jeong
- Applicant: Hwan Hee Jeong
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2009-0020132 20090310
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A light emitting device is provided. The light emitting device comprises a conductive substrate, a reflection layer, a support layer, an ohmic contact layer, and a light emitting semiconductor layer. The reflection layer is disposed on the conductive substrate. The support layer is disposed partially on the reflection layer. The ohmic contact layer is disposed at the side of the support layer. The light emitting semiconductor layer is disposed on the ohmic contact layer and the support layer.
Public/Granted literature
- US20100230703A1 LIGHT EMITTING DEVICE FABRICATION METHOD THEREOF, AND LIGHT EMITTING APPARATUS Public/Granted day:2010-09-16
Information query
IPC分类: