Invention Grant
- Patent Title: Optoelectronic device
- Patent Title (中): 光电器件
-
Application No.: US12835066Application Date: 2010-07-13
-
Publication No.: US08049242B2Publication Date: 2011-11-01
- Inventor: Jin-Ywan Lin , Jen-Chau Wu , Chih-Chiang Lu , Wei-Chih Peng , Ching-Pu Tai , Shih-I Chen
- Applicant: Jin-Ywan Lin , Jen-Chau Wu , Chih-Chiang Lu , Wei-Chih Peng , Ching-Pu Tai , Shih-I Chen
- Applicant Address: TW Hsinchu
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Priority: TW96109432A 20070319
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly.
Public/Granted literature
- US20100276719A1 OPTOELECTRONIC DEVICE Public/Granted day:2010-11-04
Information query
IPC分类: