Invention Grant
- Patent Title: Semiconductor structure and method of manufacture
- Patent Title (中): 半导体结构及制造方法
-
Application No.: US12244485Application Date: 2008-10-02
-
Publication No.: US08049261B2Publication Date: 2011-11-01
- Inventor: Bishnu Prasanna Gogoi
- Applicant: Bishnu Prasanna Gogoi
- Applicant Address: US AZ Phoenix
- Assignee: HVVi Semiconductors, Inc.
- Current Assignee: HVVi Semiconductors, Inc.
- Current Assignee Address: US AZ Phoenix
- Agency: Cool Patent, P.C.
- Agent Kenneth J. Cool
- Main IPC: H01L27/108
- IPC: H01L27/108

Abstract:
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a capacitor embedded in a dielectric material below the surface of a semiconductor substrate is disclosed. Other embodiments are described and claimed.
Public/Granted literature
- US20090108403A1 SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE Public/Granted day:2009-04-30
Information query
IPC分类: