Invention Grant
US08049263B2 Semiconductor device including metal-insulator-metal capacitor and method of manufacturing same
有权
包括金属 - 绝缘体 - 金属电容器的半导体器件及其制造方法
- Patent Title: Semiconductor device including metal-insulator-metal capacitor and method of manufacturing same
- Patent Title (中): 包括金属 - 绝缘体 - 金属电容器的半导体器件及其制造方法
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Application No.: US12419088Application Date: 2009-04-06
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Publication No.: US08049263B2Publication Date: 2011-11-01
- Inventor: Katsuhiro Torii
- Applicant: Katsuhiro Torii
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2005-141019 20050513
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/94
Abstract:
A capacitor has an MIM (Metal Insulator Metal) structure comprising a lower electrode formed in the interior of an electrode trench which is formed in an interlayer insulating film, a dielectric film formed over the lower electrode, and an upper electrode formed over the dielectric film. The upper electrode and the dielectric film are each formed with an area larger than the area of the lower electrode so that the whole of the lower electrode is positioned inside the upper electrode and the dielectric film. The reliability and production yield of the capacitor are improved.
Public/Granted literature
- US20090189250A1 Semiconductor Device and a Method of Manufacturing the Same Public/Granted day:2009-07-30
Information query
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