Bipolar device compatible with CMOS process technology

Invention Grant

US08049284B2 Bipolar device compatible with CMOS process technology 有权

Title translation: 双极器件兼容CMOS工艺技术

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Patent Title: Bipolar device compatible with CMOS process technology
Patent Title (中): 双极器件兼容CMOS工艺技术
Application No.: US12752431

Application Date: 2010-04-01
Publication No.: US08049284B2

Publication Date: 2011-11-01
Inventor: Shine Chung
Applicant: Shine Chung
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Duane Morris LLP
Main IPC: H01L29/739
IPC: H01L29/739

Bipolar device compatible with CMOS process technology

Abstract:

The present invention discloses a bipolar device. An emitter is formed in a semiconductor substrate. A collector is laterally spaced from the emitter in the substrate. A gate terminal is formed on the substrate, defining a space between the emitter and the collector. An extrinsic base is formed on the substrate with a predetermined distance from either the emitter or the collector, wherein the base, the emitter, the collector and the gate terminal are located in an active area defined by a hole in a surrounding isolation structure in the substrate.

Abstract(Chinese):

本发明公开了一种双极器件。在半导体衬底中形成发射极。收集器与衬底中的发射极横向间隔开。栅极端子形成在衬底上，限定发射极和集电极之间的空间。在基板上形成了与发射极或集电极相距预定距离的非本征基极，其中基极，发射极，集电极和栅极端子位于由围绕隔离结构的孔中限定的有源区域中基质。

Public/Granted literature

US20100187637A1 BIPOLAR DEVICE COMPATIBLE WITH CMOS PROCESS TECHNOLOGY Public/Granted day:2010-07-29

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/70	...双极器件
H01L29/72	....晶体管型器件，如连续响应于所施加的控制信号的
H01L29/739	.....受场效应控制的