Invention Grant
- Patent Title: Semiconductor light emitting device
- Patent Title (中): 半导体发光器件
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Application No.: US12473944Application Date: 2009-05-28
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Publication No.: US08049318B2Publication Date: 2011-11-01
- Inventor: Kunihito Sugimoto , Koki Matsumoto
- Applicant: Kunihito Sugimoto , Koki Matsumoto
- Applicant Address: JP Anan-shi
- Assignee: Nichia Corporation
- Current Assignee: Nichia Corporation
- Current Assignee Address: JP Anan-shi
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2008-140214 20080529
- Main IPC: H01L23/10
- IPC: H01L23/10
Abstract:
The semiconductor device includes a support substrate 101 on which a semiconductor element 105 to be mounted, a covering member 102 disposed to the support substrate via a bonding member, and a space 107 is defined between the covering member 102 and the support substrate 101. The support substrate 101 has a protruded portion 103 and the covering member 102 is disposed so that a portion thereof is in contact with the protruded portion 103 so as to define an air vent leading from the space 107 to outside.
Public/Granted literature
- US20090294940A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2009-12-03
Information query
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