One or more embodiments relate to a semiconductor device, comprising: a Si-containing layer; a barrier layer disposed over the Si-containing layer, the barrier layer comprising a compound including a metallic element; a metallic nucleation_seed layer disposed over the barrier layer, the nucleation_seed layer including the metallic element; and a metallic interconnect layer disposed over the nucleation_seed layer, the interconnect layer comprising at least one element selected from the group consisting of Cu (copper), Au (gold), and Ag (silver).