Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12794505Application Date: 2010-06-04
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Publication No.: US08049343B2Publication Date: 2011-11-01
- Inventor: Goro Nakatani
- Applicant: Goro Nakatani
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2001-224769 20010725
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48 ; H01L29/40

Abstract:
There are included a semiconductor substrate provided with a desirable element region, an electrode pad formed to come in contact with a surface of the semiconductor substrate or a wiring layer provided on the surface of the semiconductor substrate, a bonding pad formed on a surface of the electrode pad through an intermediate layer, and a resin insulating film for covering a peripheral edge of the bonding pad such that an interface of the bonding pad and the intermediate layer is not exposed to a side wall.
Public/Granted literature
- US20100237497A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-09-23
Information query
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