Invention Grant
- Patent Title: Current sensing on a MOSFET
- Patent Title (中): MOSFET上的电流检测
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Application No.: US12314114Application Date: 2008-12-04
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Publication No.: US08049523B2Publication Date: 2011-11-01
- Inventor: Meir Gazit
- Applicant: Meir Gazit
- Applicant Address: IL Herzlia
- Assignee: Solaredge Technologies Ltd.
- Current Assignee: Solaredge Technologies Ltd.
- Current Assignee Address: IL Herzlia
- Agency: The Law Office of Micheal E. Kondoudis
- Main IPC: G01R27/08
- IPC: G01R27/08

Abstract:
A device having a switch with a voltage applied across the switch. A current sensing circuit is connected to one terminal of the switch. The current sensing circuit receives power independently of the voltage applied across the switch. The power supply shares the other terminal of the switch with the current sensing circuit. The switch is adapted for opening and closing. When the switch closes, the current sensing circuit senses current through the switch and upon opening the switch the high voltage of the switch is blocked from the current sensing circuit. The sense current is caused to flow from the current sensing circuit to the other terminal when the switch is closed. The flow of the sense current produces a voltage which is compared differentially to another voltage referenced by the other terminal.
Public/Granted literature
- US20090146671A1 Current sensing on a MOSFET Public/Granted day:2009-06-11
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