Invention Grant
- Patent Title: Process, voltage, and temperature sensor
- Patent Title (中): 过程,电压和温度传感器
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Application No.: US12843955Application Date: 2010-07-27
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Publication No.: US08049527B2Publication Date: 2011-11-01
- Inventor: Jung Hee Lee
- Applicant: Jung Hee Lee
- Applicant Address: US MA Woburn
- Assignee: Skyworks Solutions, Inc.
- Current Assignee: Skyworks Solutions, Inc.
- Current Assignee Address: US MA Woburn
- Agency: Lando & Anastasi, LLP
- Main IPC: G01R31/02
- IPC: G01R31/02 ; G01R31/00

Abstract:
An integrated circuit includes a process sensor, a temperature sensor, and a voltage sensor. The process sensor is configured to sense a process parameter indicative of a semiconductor process by which the integrated circuit is formed and, based upon the sensed process parameter, to provide a characterization of the semiconductor process to the output of the process sensor. The temperature sensor is configured to provide an indication of a temperature of the integrated circuit to an output of the temperature sensor and the voltage sensor is configured to provide an indication of a power supply voltage level of the integrated circuit to an output of the voltage sensor. The output of the process sensor is coupled to at least one of the temperature sensor and the voltage sensor to compensate at least one of the indication of the temperature and the indication of the power supply voltage level.
Public/Granted literature
- US20110029266A1 PROCESS, VOLTAGE, AND TEMPERATURE SENSOR Public/Granted day:2011-02-03
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