Invention Grant
- Patent Title: Integrated circuit
- Patent Title (中): 集成电路
-
Application No.: US12627284Application Date: 2009-11-30
-
Publication No.: US08049554B2Publication Date: 2011-11-01
- Inventor: Jong-Hwan Kim
- Applicant: Jong-Hwan Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2009-0059793 20090701
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
An integrated circuit includes a first internal voltage generating unit configured to receive an external power and to generate a first internal voltage, and a second internal voltage generating unit configured to receive the first internal voltage, and to generate a second internal voltage having an absolute value of a target voltage level that is less than an absolute value of the first internal voltage, wherein the second internal voltage generating unit is initially enabled at a later time than the first internal voltage generating unit is initially enabled.
Public/Granted literature
- US20110001556A1 INTEGRATED CIRCUIT Public/Granted day:2011-01-06
Information query
IPC分类: