Invention Grant
- Patent Title: Semiconductor device, radio frequency circuit, and radio frequency power amplifier
- Patent Title (中): 半导体器件,射频电路和射频功率放大器
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Application No.: US12833536Application Date: 2010-07-09
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Publication No.: US08049559B2Publication Date: 2011-11-01
- Inventor: Junji Kaido , Masahiko Inamori , Shinichi Sonetaka , Hiroaki Kawano
- Applicant: Junji Kaido , Masahiko Inamori , Shinichi Sonetaka , Hiroaki Kawano
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2009-168865 20090717
- Main IPC: H03F3/00
- IPC: H03F3/00

Abstract:
A semiconductor device and a radio frequency circuit which are appropriate for multiband, multimode performance can be realized as a semiconductor device including a field-effect transistor formed on a semiconductor substrate, and include: ohmic electrodes serving as source and drain electrodes of the field-effect transistor, first and second Schottky electrodes provided between the ohmic electrodes and serving as gate electrodes of the field-effect transistor, and a third Schottky electrode provided and grounded between the first and second Schottky electrodes.
Public/Granted literature
- US20110012680A1 SEMICONDUCTOR DEVICE, RADIO FREQUENCY CIRCUIT, AND RADIO FREQUENCY POWER AMPLIFIER Public/Granted day:2011-01-20
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