Invention Grant
US08049559B2 Semiconductor device, radio frequency circuit, and radio frequency power amplifier 有权
半导体器件,射频电路和射频功率放大器

Semiconductor device, radio frequency circuit, and radio frequency power amplifier
Abstract:
A semiconductor device and a radio frequency circuit which are appropriate for multiband, multimode performance can be realized as a semiconductor device including a field-effect transistor formed on a semiconductor substrate, and include: ohmic electrodes serving as source and drain electrodes of the field-effect transistor, first and second Schottky electrodes provided between the ohmic electrodes and serving as gate electrodes of the field-effect transistor, and a third Schottky electrode provided and grounded between the first and second Schottky electrodes.
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