Invention Grant
- Patent Title: Lithographic system, device manufacturing method, and mask optimization method
- Patent Title (中): 光刻系统,器件制造方法和掩模优化方法
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Application No.: US11522533Application Date: 2006-09-18
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Publication No.: US08049865B2Publication Date: 2011-11-01
- Inventor: Wouter Frans Willem Mulckhuyse , Patricius Aloysius Jacobus Tinnemans
- Applicant: Wouter Frans Willem Mulckhuyse , Patricius Aloysius Jacobus Tinnemans
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C
- Main IPC: G03B27/32
- IPC: G03B27/32 ; G03B27/42 ; G03B27/54 ; G06F27/50

Abstract:
A lithographic system comprises an array of individually controllable elements, a projection system, datapath hardware, and a conversion system. The array of individually controllable elements is capable of modulating a radiation beam. The projection system is configured to project the modulated radiation beam onto a target portion of a substrate. The datapath hardware converts an input pattern file into a control signal for controlling the array of individually controllable elements. The conversion system is configured to convert a requested device layout pattern into an input pattern file for the datapath hardware. The input pattern file is a spatial-frequency-restricted representation of the requested device layout pattern.
Public/Granted literature
- US20080068569A1 Lithographic system, device manufacturing method, and mask optimization method Public/Granted day:2008-03-20
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