Invention Grant
- Patent Title: Magnetoresistance effect element with a layer containing an oxide as a principal component and containing a magnetic transition metal element which does not bond to oxygen
- Patent Title (中): 磁阻效应元件具有含有氧化物作为主要成分且含有不与氧键合的磁性过渡金属元素的层
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Application No.: US12347543Application Date: 2008-12-31
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Publication No.: US08049999B2Publication Date: 2011-11-01
- Inventor: Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
- Applicant: Hideaki Fukuzawa , Katsuhiko Koi , Hiromi Fuke , Hiroshi Tomita , Hitoshi Iwasaki , Masashi Sahashi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2000-268934 20000905; JP2000-269099 20000905
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.
Public/Granted literature
- US20090109581A1 MAGNETORESISTANCE EFFECT ELEMENT Public/Granted day:2009-04-30
Information query
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