Invention Grant
- Patent Title: Semiconductor power conversion device
- Patent Title (中): 半导体电源转换装置
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Application No.: US12525169Application Date: 2008-02-13
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Publication No.: US08050064B2Publication Date: 2011-11-01
- Inventor: Hiromichi Kuno , Satoshi Hirose , Naoyoshi Takamatsu , Hiroya Tsuji , Hiroyuki Sakakibara , Kazuki Fukatsu
- Applicant: Hiromichi Kuno , Satoshi Hirose , Naoyoshi Takamatsu , Hiroya Tsuji , Hiroyuki Sakakibara , Kazuki Fukatsu
- Applicant Address: JP Aichi-Ken JP Aichi-Ken JP Aichi-Ken
- Assignee: Toyota Jidosha Kabushiki Kaisha,Denso Corporation,Nippon Soken, Inc.
- Current Assignee: Toyota Jidosha Kabushiki Kaisha,Denso Corporation,Nippon Soken, Inc.
- Current Assignee Address: JP Aichi-Ken JP Aichi-Ken JP Aichi-Ken
- Agency: Sughrue Mion, PLLC
- Priority: JP2007-033606 20070214
- International Application: PCT/JP2008/052791 WO 20080213
- International Announcement: WO2008/099959 WO 20080821
- Main IPC: H02H7/122
- IPC: H02H7/122 ; G05F1/40

Abstract:
A surge voltage target setting unit obtains a main circuit power supply voltage of a semiconductor power conversion device based on an inter-terminal voltage of a semiconductor switching element detected by a voltage detection unit, and sets a control target of a surge voltage in accordance with the obtained main circuit power supply voltage. An active gate control unit, when the semiconductor switching element is turned off, sets a quantity of voltage modification so as to modify a gate voltage in a direction raising the gate voltage, that is, in a direction lowering a turn-off speed, based on feedback of the inter-terminal voltage, when the inter-terminal voltage exceeds the control target.
Public/Granted literature
- US20100008113A1 SEMICONDUCTOR POWER CONVERSION DEVICE Public/Granted day:2010-01-14
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