Invention Grant
- Patent Title: Rectifier circuit, power supply circuit, and semiconductor device
- Patent Title (中): 整流电路,电源电路和半导体器件
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Application No.: US13022789Application Date: 2011-02-08
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Publication No.: US08050070B2Publication Date: 2011-11-01
- Inventor: Yutaka Shionoiri
- Applicant: Yutaka Shionoiri
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2006-321034 20061129
- Main IPC: H02M7/00
- IPC: H02M7/00

Abstract:
It is an object of the present invention to provide a rectifier circuit that can suppress deterioration or dielectric breakdown of a semiconductor element due to excessive current. A rectifier circuit of the present invention includes at least a first capacitor, a second capacitor, and a diode which are sequentially connected in series in a path which connects an input terminal and one of two output terminals, and a transistor. The second capacitor is connected between one of a source region and a drain region and a gate electrode of the transistor. Further, the other one of the source region and the drain region and the other one of two output terminals are connected each other.
Public/Granted literature
- US20110127338A1 RECTIFIER CIRCUIT, POWER SUPPLY CIRCUIT, AND SEMICONDUCTOR DEVICE Public/Granted day:2011-06-02
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