A nonvolatile memory device, using a resistance material, includes a memory cell array having nonvolatile memory cells arranged in a matrix, multiple bit lines, a column selection circuit and column drivers. The bit lines are coupled to columns of the nonvolatile memory cells in the memory cell array. The column selection circuit selects at least one bit line in response to column selection signals. Each column driver supplies a column selection signal, and includes a first charge unit that charges an output port of the column driver to a first voltage level in response to a first charge signal, a second charge unit that charges the output port of the column driver to a second voltage level from the first voltage level in response to a second charge signal, and a current controller that controls a current path from the second charge unit to the first charge unit.