An integrated circuit device includes a first word-line; a second word-line; a first bit-line; and a static random access memory (SRAM) cell. The SRAM cell includes a storage node; a pull-up transistor having a source/drain region coupled to the storage node; a pull-down transistor having a source/drain region coupled to the storage node; a first pass-gate transistor comprising a gate coupled to the first word-line; and a second pass-gate transistor including a gate coupled to the second word-line. Each of the first and the second pass-gate transistors includes a first source/drain region coupled to the first bit-line, and a second source/drain region coupled to the storage node.