Invention Grant
US08050087B2 Non-volatile memory device including block state confirmation cell and method of operating the same
有权
包括块状态确认单元的非易失性存储器件及其操作方法
- Patent Title: Non-volatile memory device including block state confirmation cell and method of operating the same
- Patent Title (中): 包括块状态确认单元的非易失性存储器件及其操作方法
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Application No.: US12071349Application Date: 2008-02-20
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Publication No.: US08050087B2Publication Date: 2011-11-01
- Inventor: Ju-hee Park , Jae-woong Hyun , Kyoung-lae Cho , Yoon-dong Park , Seung-hoon Lee , Kee-won Kwon
- Applicant: Ju-hee Park , Jae-woong Hyun , Kyoung-lae Cho , Yoon-dong Park , Seung-hoon Lee , Kee-won Kwon
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, PLC
- Priority: KR10-2007-0061874 20070622
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04

Abstract:
Provided are a semiconductor device having a block state confirmation cell that may store information indicating the number of data bits written to a plurality of memory cells, a method of reading memory data based on the number of the data bits written, and/or a memory programming method of storing the information indicating the number of the data bits written. The semiconductor device may include one or more memory blocks and a controller. Each of the memory blocks may include a plurality of memory cells each storing data, and a block state confirmation cell storing information indicating the number of data bits written to the memory cells. The controller may read the data bits from the memory blocks based on the number of data bits, which is indicated in the information in the block state confirmation cell.
Public/Granted literature
- US20080316824A1 Non-volatile memory device and method of operating the same Public/Granted day:2008-12-25
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