Invention Grant
- Patent Title: Memory cell array and non-volatile memory device
- Patent Title (中): 存储单元阵列和非易失性存储器件
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Application No.: US12198186Application Date: 2008-08-26
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Publication No.: US08050094B2Publication Date: 2011-11-01
- Inventor: Ji-Ho Cho
- Applicant: Ji-Ho Cho
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2007-0087576 20070830
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
A memory cell array, divided into multiple row memory cell arrays, includes multiple memory banks and sense amplifiers. Each of the memory banks includes multiple logical sectors and at least two sub-memory banks of multiple sub-memory banks. The at least two sub-memory banks are included in different row memory cell arrays, and each of the sub-memory banks includes multiple physical sectors. The sense amplifiers are dedicated to the sub-memory banks, respectively.
Public/Granted literature
- US20090059666A1 MEMORY CELL ARRAY AND NON-VOLATILE MEMORY DEVICE Public/Granted day:2009-03-05
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