Invention Grant
US08050094B2 Memory cell array and non-volatile memory device 失效
存储单元阵列和非易失性存储器件

Memory cell array and non-volatile memory device
Abstract:
A memory cell array, divided into multiple row memory cell arrays, includes multiple memory banks and sense amplifiers. Each of the memory banks includes multiple logical sectors and at least two sub-memory banks of multiple sub-memory banks. The at least two sub-memory banks are included in different row memory cell arrays, and each of the sub-memory banks includes multiple physical sectors. The sense amplifiers are dedicated to the sub-memory banks, respectively.
Public/Granted literature
Information query
Patent Agency Ranking
0/0