Invention Grant
US08050099B2 Apparatus for generating a voltage and non-volatile memory device having the same
有权
用于产生具有该电压和非易失性存储器件的电压和非易失性存储器件的装置
- Patent Title: Apparatus for generating a voltage and non-volatile memory device having the same
- Patent Title (中): 用于产生具有该电压和非易失性存储器件的电压和非易失性存储器件的装置
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Application No.: US12473302Application Date: 2009-05-28
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Publication No.: US08050099B2Publication Date: 2011-11-01
- Inventor: In Soo Wang , Yu Jong Noh , Lee Hyun Kwon , Bon Kwang Koo
- Applicant: In Soo Wang , Yu Jong Noh , Lee Hyun Kwon , Bon Kwang Koo
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2008-0051037 20080530
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04 ; G11C16/06

Abstract:
An apparatus for generating a voltage includes a first voltage outputting circuit configured to receive an input voltage and adjust and output a first voltage in accordance with a temperature, a buffer circuit configured to receive the first voltage and output the received first voltage as a second voltage at an output node of the buffer circuit, and a second voltage outputting circuit configured to receive the second voltage at an input terminal and output a third voltage by dividing a driving voltage in accordance with a resistance ratio, wherein the second voltage outputting circuit includes a sub-voltage outputting circuit and a controlling circuit configured to adjust a voltage level of the third voltage through a feedback of the third voltage to the input terminal.
Public/Granted literature
- US20090296484A1 Apparatus for Generating A Voltage and Non-Volatile Memory Device Having the Same Public/Granted day:2009-12-03
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