Invention Grant
US08050101B2 Nonvolatile memory devices having erased-state verify capability and methods of operating same
有权
具有擦除状态验证能力的非易失性存储器件及其操作方法
- Patent Title: Nonvolatile memory devices having erased-state verify capability and methods of operating same
- Patent Title (中): 具有擦除状态验证能力的非易失性存储器件及其操作方法
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Application No.: US12543993Application Date: 2009-08-19
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Publication No.: US08050101B2Publication Date: 2011-11-01
- Inventor: Kitae Park , Chanik Park
- Applicant: Kitae Park , Chanik Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2008-0092856 20080922
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A program method of a nonvolatile memory device includes applying a program voltage to program cells for changing data; verifying the program cells, based on the changed data; and verifying program inhibit cells for maintaining stored data even when the program voltage is applied to the program inhibit cells, based on the stored data.
Public/Granted literature
- US20100074025A1 Nonvolatile Memory Devices Having Erased-State Verify Capability and Methods of Operating Same Public/Granted day:2010-03-25
Information query
