Invention Grant
- Patent Title: Word line activation in memory devices
- Patent Title (中): 内存设备中的字线激活
-
Application No.: US11945441Application Date: 2007-11-27
-
Publication No.: US08050102B2Publication Date: 2011-11-01
- Inventor: Michele Incarnati , Giovanni Santin
- Applicant: Michele Incarnati , Giovanni Santin
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Priority: ITRM2007A0382 20070710
- Main IPC: G11C16/06
- IPC: G11C16/06 ; G11C16/08

Abstract:
Memory devices and methods facilitate flexibility in applying differing biasing schemes to word lines. For example, one such memory device can include an architecture capable of partitioning word lines into one of a plurality of address spaces. Each address space has a corresponding configuration control bus. By identifying the address space to which a word line belongs, its appropriate configuration control bus may be selected and the control signals from the selected bus used to select the appropriate potentials for driving the word lines.
Public/Granted literature
- US20090016143A1 WORD LINE ACTIVATION IN MEMORY DEVICES Public/Granted day:2009-01-15
Information query