Invention Grant
- Patent Title: Method of programming nonvolatile memory device
- Patent Title (中): 非易失性存储器件编程方法
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Application No.: US12361195Application Date: 2009-01-28
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Publication No.: US08050103B2Publication Date: 2011-11-01
- Inventor: You Sung Kim , Byung Ryul Kim
- Applicant: You Sung Kim , Byung Ryul Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2008-0050100 20080529
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
In one aspect of the method of programming a nonvolatile memory device, memory cells selected for a program are determined to belong to a first memory cell group or a second memory cell group based on address information and a program command. According to this determination, to-be-programmed data are input based on information about the number of set data bits, and programming and verification are performed.
Public/Granted literature
- US20090296478A1 METHOD OF PROGRAMMING NONVOLATILE MEMORY DEVICE Public/Granted day:2009-12-03
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