A non-volatile memory device and system are provided. The non-volatile memory device including; a memory cell array of memory blocks, and a bit line bias block connected to the bit lines and configured to precharge the bit lines, a page buffer precharging the plurality of bit lines and sensing data stored in the memory block via the bit lines, and a controller controlling the bit line bias block to simultaneously precharge the bit lines with the page buffer, thereby reducing the bit line bias time.